GaN
Nanowires
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n-GaN
Scale bar is 2 µm |
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- I-Vsd curves for a 17.6 nm diameter GaN nanowire are linear indicating that the metal electrodes make
ohmic contacts.
- The dependence of the I-Vsd curves on the underlying
silicon gate voltage shows that the GaN nanowires are n-type since the conductance
increases with increasingly positive Vg and decreases with increasingly
negative Vg.
- The n-type behavior in nominally undoped GaN is likely
due to nitrogen vacancies and/or oxygen impurities.
- The I vs Vg for
a GaN nanowire device recorded at different source-drain voltages are characteristic
of an n-channel metal-oxide-semiconductor field-effect-transistor.
