(2020) Solid-Phase Crystallization Produces Oxide Buffer Layers Lattice-Matched to Semiconductors

Engineers currently lack good substrate materials on which to grow thin films of materials like GaN with few defects. These layers are needed in applications like high-power transistors and solid-state lighting. Available bulk crystals have the wrong crystal structure or the wrong distance between the atoms. The Wisconsin MRSEC has developed a buffer layer material and related synthesis method that promises to alleviate the substrate problem.